Optical metrology device for measuring samples having thin or thick films

ABSTRACT

An optical metrology device includes an aperture that can be adjusted based on the thickness of the film on a sample. The aperture is adjusted to have a first aperture configuration or a second aperture configuration, where the second aperture configuration allows more light to pass. The aperture may be adjusted to use the second aperture configuration, e.g., if the thickness of the film produces a lateral shift from each internal reflection in the film at least 80% of the measurement spot size or the film thickness is greater than a predesignated amount, or if the light measured with the first aperture configuration and second aperture configuration differs by more than a predetermined threshold. The aperture may be in the source arm of the optical system, e.g., between the light source and the sample, or the receiver arm of the optical system, e.g., between the sample and the detector.

FIELD OF THE INVENTION

The present invention is related to optical metrology and, inparticular, to optical metrology of samples having thin or thick films.

BACKGROUND

Semiconductor and other similar industries, often use optical metrologyequipment to provide non-contact evaluation of substrates duringprocessing. With optical metrology, a sample under test may beilluminated with light at a single wavelength or multiple wavelengths,e.g., at an oblique angle. After interacting with the sample, theresulting light is detected and analyzed to determine a desiredcharacteristic of the sample. For example, the measured light from thesample may be compared to predicted light from a model. Desiredparameters of the sample are varied in the model until a good fit isachieved between the predicted light and the measured light, at whichtime the modeled parameters are determined to be the characteristic ofthe sample.

Samples of interest typically have one or more films stacked on asubstrate. In the semiconductor industry, and other similar industries,thin films ranging from a fraction of a nanometer to a few micrometersin thickness are used. The measurement of thin films using opticalmetrology is well known and considered straight forward. Industries,such as the semiconductor industry, however, are significantlyincreasing the thickness of films due to vertical stacking, which posesnew challenges for conventional optical metrology techniques. Forexample, internal reflections of light within thick films producecomplications that are difficult to overcome using conventional modelingtechniques.

SUMMARY

An optical metrology device includes an aperture that can be adjustedbased on the thickness of the film on a sample. The aperture is adjustedto have a first aperture configuration or a second apertureconfiguration, where the second aperture configuration allows more lightto pass. The aperture may be adjusted to use the second apertureconfiguration, e.g., if the thickness of the film produces a lateralshift from each internal reflection in the film at least 80% of themeasurement spot size or the film thickness is greater than apredesignated amount, or if the light measured with the first apertureconfiguration and second aperture configuration differs by more than apredetermined threshold. The aperture may be in the source arm of theoptical system, e.g., between the light source and the sample, or thereceiver arm of the optical system, e.g., between the sample and thedetector.

In one implementation, a method of determining a characteristic of afilm on a sample with an optical metrology device includes producinglight with a light source; focusing the light to be obliquely incidentin a measurement spot on the sample, the measurement spot having a spotsize, wherein at least a portion of the light is reflected off thesample; receiving the light reflected from the sample with a detector;adjusting a configuration of an aperture in a beam path of the light touse a first aperture configuration or a second aperture configurationbased on a thickness of the film on the sample, wherein the secondaperture configuration allows more light to pass in the beam path thanthe first aperture configuration; and determining the characteristic ofthe film on the sample with output signals from the detector in responseto the light reflected from the sample.

In one implementation, an optical metrology device capable ofdetermining a characteristic of a film on a sample includes a lightsource that produces light; a first set of focusing optics thatobliquely focuses the light into a measurement spot on the sample, themeasurement spot having a spot size, wherein at least a portion of thelight is reflected by the sample; a second set of focusing optics thatreceives the light reflected from the sample; a detector that receivesthe light from the second set of focusing optics; an adjustable aperturein a beam path of the light, wherein the adjustable aperture isconfigured to have a first aperture configuration or a second apertureconfiguration based on a thickness of the film on the sample, whereinthe second aperture configuration allows more light to pass in the beampath than the first aperture configuration; and at least one processorcoupled to the detector and configured to determine the characteristicof the sample with output signals from the detector in response to thelight reflected from the sample.

In one implementation, an optical metrology device capable ofdetermining a characteristic of a film on a sample, includes a lightsource that produces light; a first set of focusing optics thatobliquely focuses the light into a measurement spot on the sample, themeasurement spot having a spot size, wherein at least a portion of thelight is reflected by the sample; a second set of focusing optics thatreceives the light reflected from the sample; a detector that receivesthe light from the second set of focusing optics; a first aperture in abeam path of the light positioned between the light source and thesample; a second aperture in the beam path positioned between the sampleand the detector; wherein at least one of the first aperture and thesecond aperture is adjustable to a different configuration based on athickness of the film on the sample, wherein in a first configurationsizes of the first aperture and the second aperture match and in asecond configuration the sizes of the first aperture and the secondaperture do not match and one of the first aperture and the secondaperture allows more light to pass in the beam path than the other; andat least one processor coupled to the detector and configured todetermine the characteristic of the sample with output signals from thedetector in response to the light reflected from the sample.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a side view of the interaction of obliquely incidentlight with a thick film on a substrate.

FIG. 2 illustrates an optical metrology device that may be configured toperform measurements of samples having either thin films or thick films.

FIG. 3 illustrates the receiver arm of the optical metrology device withthe aperture configured to measure a thin film on a sample.

FIGS. 4-6 illustrate the receiver arm of the optical metrology devicewith various adjustments to the aperture to measure a thick film on asample.

FIG. 7 illustrates a side view of a sample with a thin film andillustrates a measurement spot and the detected area on the sample asapproximately the same size and coincident.

FIG. 8 illustrates a side view of a sample with a thick film causinglateral beam walking of the incident light and illustrates the exclusionof light that is detected due to the aperture in the receiver arm beingconfigured to measure a thin film.

FIG. 9 illustrates a side view of a sample with a thick film causinglateral beam walking of the incident light and illustrates the inclusionof light that is detected due to the aperture in the receiver arm beingconfigured to measure a thick film.

FIG. 10 illustrates the source arm of the optical metrology device withthe aperture configured to measure a thin film on a sample.

FIGS. 11-13 illustrate the receiver arm of the optical metrology devicewith various adjustments to the aperture to measure a thick film on asample.

FIG. 14 illustrates a side view of a sample with a thick film causinglateral beam walking of the incident light and illustrates an increasedmeasurement spot size from the aperture in the source arm beingconfigured to measure a thick film to reduce the effects of lateral beamwalking.

FIG. 15A illustrates data conventionally measured from a 6 μm film by aspectroscopic ellipsometer and theoretical data fit to the measured databy conventional modeling.

FIG. 15B illustrates data conventionally measured from the 6 μm film bythe spectroscopic ellipsometer and theoretical data fit to the measureddata by modeling lateral beam walking.

FIG. 15C illustrates data measured from a 6 μm film by a spectroscopicellipsometer using an aperture configured to measure a thick film andtheoretical data fit to the measured data by conventional modeling.

FIG. 16A illustrates data conventionally measured from a 10 μm film by aspectroscopic ellipsometer and theoretical data fit to the measured databy conventional modeling.

FIG. 16B illustrates data conventionally measured from the 10 μm film bythe spectroscopic ellipsometer and theoretical data fit to the measureddata by modeling lateral beam walking.

FIG. 16C illustrates data measured from a 10 μm film by a spectroscopicellipsometer using an aperture configured to measure a thick film andtheoretical data fit to the measured data by conventional modeling.

FIG. 17 is a flow chart illustrating a method of determining acharacteristic of a film on a sample with an optical metrology devicewith an aperture that may be configured to measure either thin films orthick films.

DETAILED DESCRIPTION

An optical metrology device may be configured to perform measurements ofsamples having either thin films or thick films by adjusting an aperturein the beam path based on the thickness of the film on the sample. Theaperture may be adjusted to have a first aperture configuration if thefilm is thin and may be adjusted to have a second aperture configurationif the film is thick, where the second aperture configuration allowsmore light to pass than the first aperture configuration. The aperturemay be in the receiver arm of the optical system or the source arm ofthe optical system. With the use of the adjustable aperture, the opticalmetrology device may accurately measure both samples with thin films andsamples with thick films, while advantageously using the same modelingtechniques.

With a conventional optical metrology device, a conflict arises whenattempting to accurately measure a small area of a sample, e.g.,typically a measurement pad may be 25 or 50 microns across, when a filmon the sample is thick, e.g., 10 μm or more. To measure a small area ona sample, optical systems typically use apertures in both the source armand the receiver arm that respectively limit the area of the sample thatis illuminated, i.e., the size of the measurement spot, and the area ofthe sample that is imaged by the detector. The two apertures aretypically matched so that the area illuminated and the area sampled bythe detector is approximately the same size and is coincident. The useof two matching apertures in the optical system, one on the source sideand one on the detector side, is a common configuration used in opticalmetrology systems for reducing the impact of tails of the measurementspot. With use of two matching apertures, the measurement spot size canbe minimized more efficiently than with a single-aperture system.

As the thickness of films has been increasing in the semiconductor andother industries, the accurate measurement of a small area on thesefilms has become more problematic. With a relatively thick film, themeasurement spot from obliquely incident light tends to smear in thedirection of beam propagation, which is sometimes referred to herein aslateral beam walking. The lateral beam walking of the incident lighteffectively increases the area from which the sample returns light.Using an optical system configured for thin films results in thedetection of only a portion of the area from which the sample returnslight. For example, only light from a discrete area on the sample, whichis approximately the same size and coincident with the initialmeasurement spot, is detected. Light returned from the sample over theincreased area, due to lateral beam walking, is excluded from detection.The exclusion of this light results in artifacts in the measured dataand inaccuracies when determining a characteristic of the sample.

FIG. 1, for example, illustrates a side view of the interaction ofobliquely incident light 110 with a thick film 104 on a substrate 102.As illustrated, the substrate 102 has a first refractive index n₁, thethick film 104 has a second refractive index n₂, and air 106 has a thirdrefractive index n₃. The beam of light 110 is illustrated as beingobliquely incident on the top surface of the thick film 104 producing aspot 111. As per Fresnel equations, a portion of the light is reflectedand another portion is transmitted at each media interface. Asillustrated in FIG. 1, a portion of the incident light 110 istransmitted (t₃₂) and a portion is reflected (r₃₂) at the interfacebetween the air 106 and the film 104. The reflected light (r₃₂) is lightthat is returned from the film 104 (r₁=r₃₂). Within the film 104,multiple internal reflections (r₂₁ and r₂₃) respectively occur at theinterface between the film 104 and the substrate 102 and at theinterface between the film 104 and the air 106, and at each interface aportion of the internally reflected light is transmitted.

The multiple internal reflections within the film 104 produces lateralbeam walking, e.g., a portion of the incident light propagates withinthe film 104 so that the light is returned from the film 104 over asignificantly greater area than initially incident. For example, at theinterface between the film 104 and the air 106, the internally reflectedlight in film 104 is transmitted (t₂₃) into air 106 and thus, isreturned from the sample (r₂, r₃, r₄). FIG. 1 illustrates the internalreflection within the film 104 as producing reflections of the initialmeasurement spot 111 as spots 113, 115, 117 on the surface of the film104, i.e., at the interface between the film 104 and air 106. The lightreturned from the surface of the film 104 in response to the incidentlight may be written as:{tilde over (r)}={tilde over (r)} ₁ +{tilde over (r)} ₂ +{tilde over(r)} ₃+ . . .  eq. 1

Moreover, due to the internal reflections and lateral beam walking, eachreflection coefficient may be written as:r ₁ =r ₂r ₂ =t ₃₂ r ₂₁ t ₂₃ e ^(−2iβ)r ₃ =t ₃₂ r ₂₁ r ₂₃ r ₂₁ t ₂₃ e ^(−4iβ)...  eq. 2

where r_(j) is calculated by Fresnel's equation, and β is thepropagation constant in the film.

Thus, as can be seen in FIG. 1, the lateral beam walking caused by thethick film 104 results in light being returned from the film 104, e.g.,spots 111, 113, 115, and 117, over a much larger area than the initiallyincident light 110, e.g., spot 111.

If film 104 were thin, on the other hand, the beam of light 110 may beassumed to be a plane wave with infinite size. Accordingly, allreflection orders may be considered to overlap, i.e., light returnedfrom a thin film (equation 1) is returned from the same location.

The assumption that the beam of light 110 is a plane wave with infinitesize is invalid when the film 104 is thick enough that the lateral shift(LS) from each reflection is on the order of the spot size asillustrated in FIG. 1. Accordingly, the light returned from a thin film(equation 1) is returned over an extended area, resulting in multiplecomplications. For example, unlike in a thin film, the interference oflight in a thick film is not consistent across the sample surface due tothe lateral shift. For example, the first reflection r₁ may not overlap,and hence interfere, with the 4th reflection r₄. Additionally, thereceiver arm of an optical metrology device typically only passes lightfrom a small region on the sample surface to the detector, illustratedin FIG. 1 as the region 119 defined by the dashed ellipse. As can beseen, the light that is returned from thick film 104 in response to theincident light 110, illustrated by spots 111, 113, 115, and 117, extendsover a much larger area than the region 119 of the film thatconventionally is sampled by a detector. In other words, the light thatis detected from region 119 of the film, excludes a significant amountof the light returned from the thick film 104, thereby creatingartifacts in the measured data, which will produce inaccuratemeasurement results.

FIG. 2 illustrates a schematic view of an optical metrology device 200that may be configured to perform measurements of samples having eitherthin films or thick films. FIG. 2, by way of example, illustrates asample 201, including a substrate 202 and a film, which may be either athin film or a thick film, where the sample 201 is held on by a chuck206 on a moveable stage 208. The stage 208, for example, may be capableof horizontal motion in either Cartesian (i.e., X and Y) coordinates, orPolar (i.e., R and θ) coordinates or some combination of the two. Thestage may also be capable of vertical motion along the Z coordinate. Ifdesired, the optical system of the optical metrology device 200 may bemoveable or both the stage 208 and the optical system of the opticalmetrology device 200 may be moveable to produce the desired relativemotion between the sample 201 and the optical system of the opticalmetrology device 200.

As illustrated in FIG. 2, the source arm 210 of the optical metrologydevice 200 includes a light source 212 that produces light 213 that isfocused into a spot on the surface of the sample 201, i.e., on the film204, by optics illustrated by lenses 214 and 216. The light source 212,for example, may be monochromatic or polychromatic, and may be, e.g., aXenon Arc lamp and/or a Deuterium lamp or other type of lamp(s) orlaser(s) to produce desired wavelength(s). The receiver arm 220 of theoptical metrology device 200 includes optics illustrated by lenses 222and 224 and the detector 226, that receive the light 213 afterinteracting with the sample 201. The detector 226, for example, may be,e.g., a spectrometer, photometer, imaging device, etc., as desired permeasurement application. While the lenses in FIG. 2 are illustrated asrefractive optics, it should be understood that reflective optics or acombination of refractive and reflective optics may be used.Additionally, as shown in FIG. 2, the source arm 210 includes anaperture 218 and the receiver arm 220 includes a second aperture 228,where one or both of the apertures 218 and 228 are adjustable based onthe thickness of the film 204 on the sample 201.

It should be understood that the optical metrology device 200 is asimplified diagram of specific components in a representative opticalsystem but does not depict all components that may be included in theoptical metrology system. For example, the optical metrology device mayinclude additional components, such as one or more polarizing elementsillustrated as polarizer 219 and analyzer 229 in the beam path. Thus,the optical system of optical metrology device 200 illustrated in FIG. 2may be used as a reflectometer, ellipsometer, scatterometer, or othertype of metrology system as desired.

FIG. 2 further illustrates a processor 230 receives the data from thedetector 226 and may be used to control various components in opticalmetrology device, such as one or both of the apertures 218, 228,polarizer 219, analyzer 229, chuck 206, and stage 208 to perform thedesired measurement operations on the sample 201. The processor 230 maybe a computer, such as a workstation, a personal computer, centralprocessing unit or other adequate computer system, or multiple systems.The processor 230 is preferably included in, or is connected to orotherwise associated with optical metrology device 200. The processor230 may also collect and analyze the data obtained from the detector226. For example, the processor 230 may analyze the data to determineone or more physical characteristics of the sample 201 whether thesample 201 includes a thick film or a thin film, e.g., using modelingtechniques. The processor 230, which includes at least one processingunit 232 with memory 234, as well as a user interface including e.g., adisplay 236 and input devices 238. A non-transitory computer-usablestorage medium 239 having computer-readable program code embodied may beused by the processor 230 for causing the at least one processor tocontrol the optical metrology device 100 and to perform the functionsincluding the analysis described herein. The data structures andsoftware code for automatically implementing one or more acts describedin this detailed description can be implemented by one of ordinary skillin the art in light of the present disclosure and stored, e.g., on thenon-transitory computer-usable storage medium 239, which may be anydevice or medium that can store code and/or data for use by a computersystem such as the at least one processing unit 232. The computer-usablestorage medium 239 may be, but is not limited to, magnetic and opticalstorage devices such as disk drives, magnetic tape, compact discs, andDVDs (digital versatile discs or digital video discs). A communicationport 237 may also be used to receive instructions that are used toprogram the processor 230 to perform any one or more of the functionsdescribed herein and may represent any type of communication connection,such as to the internet or any other computer network. The communicationport 237 may further export signals, e.g., with measurement resultsand/or instructions, to another system, such as external process tools,in a feed forward or feedback process in order to adjust a processparameter associated with a fabrication process step of the samplesbased on the measurement results. Additionally, the functions describedherein may be embodied in whole or in part within the circuitry of anapplication specific integrated circuit (ASIC) or a programmable logicdevice (PLD), and the functions may be embodied in a computerunderstandable descriptor language which may be used to create an ASICor PLD that operates as herein described.

As illustrated by the arrows in FIG. 2, one or both of apertures 218 and228 may be adjusted to configure the aperture based on the thickness ofthe film 204 on the sample 201. For example, aperture 228 in thereceiver arm 220 may be adjusted to have a first aperture configurationif the film 204 is thin and may be adjusted to have a second apertureconfiguration if the film 204 is thick, where the second apertureconfiguration allows more light to pass than the first apertureconfiguration. The aperture 218 in the source arm 210 may optionally beadjusted, but is not required to be adjusted, when aperture 228 isadjusted.

By way of example, the thickness of the film may be characterized by therelationship between the lateral shift (LS) illustrated in FIG. 1 andthe measurement spot size. For example, a film may be considered thickdepending on several parameters in addition to the actual thickness ofthe film. The angle of incidence of the light and the refractive indexof the materials will alter the angle of internal reflection of thelight, and as can be seen in FIG. 1, with a greater the angle ofreflection, a larger lateral shift LS will be produced. Additionally,the measurement spot size determines whether beam walking will have aneffect on the measurement results, e.g., with a large measurement spotsize, beam walking will have less affect. Accordingly, by way ofexample, a film may be referred to as thick if the lateral shift fromeach internal reflection in the film is more than approximately 80% ofthe spot size, although a film may be considered to be thick if thelateral shift is less than 80%, e.g., 20%50% of the spot size, or a filmmay not be considered to be thick until the lateral shift is more than80%, e.g., 90%, of the spot size. Alternatively, the film may beconsidered to be thick, e.g., if it has a thickness greater than apredetermined thickness, e.g., 10 μm or greater. It should be understoodthat the thickness of the film may be characterized in other manners.For example, a film may be characterized as thick if the inaccuracies inthe measurement result due to lateral beam walking exceed a desiredtolerance, and thus, may be user defined. For example, whether a film isconsidered thick may depend on a particular metrology application. Byway of example, in implementations where only film thickness is beingmeasured (e.g., fit to a model), minor distortions of the measurementdata resulting from lateral beam walking may be tolerable. On the otherhand, in implementations where multiple sample parameters are beingextracted, e.g., as is common in Optical Critical Dimension (OCD)measurements, measurement data is more critical, and accordingly, thetolerance in the degradation of the measurement data due to lateral beamwalking may be much smaller. In one implementation, it may be desirablefor the user to select whether a film is to be considered thick or thinfor a particular metrology device on an application by applicationbasis. In one implementation, a film may be considered thick based onthe affect it has on the light received from the sample, e.g., if thelateral beam shift caused by the thickness of the film affects thedetected light by more than a predetermined threshold, the film may beconsidered to be thick.

The aperture 228 in the receiver arm 220 may be adjusted to alternatebetween a standard aperture and an enlarged aperture (or no aperture)based on the thickness of the film on the sample 201. The aperture 228may be adjusted in several different ways to use the first apertureconfiguration on a standard thin film or to use the second apertureconfiguration which allows more light to pass than the first apertureconfiguration on a thick film.

FIGS. 3, 4, 5, and 6, by way of example, illustrate a portion of thelight 213 incident on the sample 201 and the receiver arm 220 of theoptical metrology device, with the aperture 228 adjusted in differentconfigurations based on the thickness of the film 204 on the sample 201.For example, FIG. 3 illustrates the film 204 as being relatively thin,e.g., the lateral shift from each internal reflection in the film 204 isless than 80% of the spot size, or the film is less than 10 μm thick.The aperture 228, as shown in FIG. 3, is adjusted to have a firstaperture configuration, which may be matched to the size of the aperture218 in the source arm 210, shown in FIG. 2. Because the aperture 228 inthe receiver arm 220 is matched to the aperture 218 in the source arm210, the light received by the detector 226 is from an area of thesample 201 that is approximately the same as (and coincident with) themeasurement spot.

FIGS. 4, 5, and 6, on the other hand, illustrates the sample 201 with afilm 204 that is considered to be thick, e.g., the lateral shift fromeach internal reflection in the film 204 is at least 80% of the spotsize, or the film is 10μm thick or more. When the film 204 is thick, theaperture 228 in the receiver arm 220 may be adjusted to a secondaperture configuration that allows more light to pass in the beam paththan the first aperture configuration. The aperture 228 may be adjustedin several different ways. For example, as illustrated in FIG. 4, thesize of the opening 228 o in the aperture 228 may be increased in size.By increasing the size of the opening 228 o, the aperture 228 in thereceiver arm 220 no longer matches the aperture 218 in the source arm210 and the light received by the detector 226 is from an area of thesample 210 that is larger than the measurement spot, as illustrated bythe dotted ray lines 213′.

In another implementation, to adjust the aperture 228 to the secondaperture configuration, the aperture 228 may be moved. For example, asillustrated in FIG. 5, the aperture 228, which has an opening 228 o witha first size, may be moved and physically replaced with a secondaperture 228′, which has an opening 228 o′ with a second size that islarger than opening 2280. By replacing the aperture 228 with a secondaperture 228′ with a larger opening 228 o′, the aperture 228′ in thereceiver arm 220 no longer matches the aperture 218 in the source arm210 and the light received by the detector 226 is from an area of thesample 210 that is larger than the measurement spot, as illustrated bythe dotted ray lines 213′.

FIG. 6 illustrates another example of moving the aperture 228 to producea second aperture configuration. As illustrated in FIG. 6, the aperture228 is moved out of the beam path, but is not replaced with a differentaperture. By adjusting the aperture 228 in the receiver arm 220 toremove it from the beam path, there is no longer an aperture in thereceiver arm 220 that matches the aperture 218 in the source arm 210 andthe light received by the detector 226 is from an area of the sample 210that is larger than the measurement spot, as illustrated by the dottedray lines 213′.

FIG. 7 illustrates, with dashed lines and by arrow 702, the light thatis incident on the sample 201 to form a measurement spot 704 andillustrates, with dotted lines and by arrow 712, the light received bythe detector 226 (shown in FIG. 2) from an area 714 on the sample 201.The film 204 in FIG. 7 is relative thin, e.g., the lateral shift fromeach internal reflection in the film 204 is less than 80% of the size ofmeasurement spot 704, or the film is less than 10 μm thick, andaccordingly, the aperture 228 in the receiver arm 220 is adjusted tohave a first aperture configuration (as illustrated in FIG. 3).Accordingly, as illustrated in FIG. 7, the area 714 from which light isdetected on the sample 201 is approximately the same as and iscoincident with the measurement spot 704.

FIG. 8 is similar to FIG. 7, but illustrates film 204 as being relativethick, e.g., the lateral shift from each internal reflection in the film204 is at least 80% of the spot size, or the film is 10 μm thick ormore, producing beam walking, illustrated by a number of spots 802, 804,and 806 on the surface of the film 204 that are in addition to themeasurement spot 704 from the incident light (shown with dashed linesand arrow 702). If the aperture 228 in the receiver arm 220 is notadjusted when film 204 is thick, the detector 226 (shown in FIG. 2) willreceive light (illustrated with dotted lines and arrow 712, over an area714 that is approximately the same as and is coincident with themeasurement spot 704 (i.e., the spot produced by the incident light),but will not receive light resulting from the lateral shift within thefilm 204, illustrated as spots 802, 804, and 806. Accordingly, analysisof the detected light collected from only area 714 will produce aninaccurate measurement of the sample 201.

FIG. 9 is similar to FIG. 8, but illustrates an increased area 914 fromwhich light is detected on the sample 201 due to the aperture 228 in thereceiver arm 220 being adjusted to have the second apertureconfiguration (as illustrated in FIGS. 4-6), in which more light passesthan the first aperture configuration. As can be seen in FIG. 9, theadjustment of the aperture 228 to the second aperture configuration tothat light is collected over area 914 permits the detection of lightfrom lateral shift within the film 204, illustrated as spots 802, 804,and 806. Accordingly, analysis of the detected light collected from area914 will produce a more accurate measurement of the sample 201 thanlight from only area 714, shown in FIG. 8. It is noted that while thecollection of light from an increased area 914 is useful because itpermits collecting more of the spots 802, 804, and 806, there may stillbe inaccuracies due to the change in interference caused by the beamwalking, as discussed above.

Referring back to FIG. 2, in another implementation, aperture 218 in thesource arm 210, as opposed to the aperture 228 in the receiver arm 220,may be adjusted to have a first aperture configuration if the film 204is thin and may be adjusted to have a second aperture configuration ifthe film 204 is thick, where the second aperture configuration allowsmore light to pass than the first aperture configuration. The aperture228 in the receiver arm 220 may optionally be adjusted, but is notrequired to be adjusted, when aperture 218 is adjusted.

By increasing the light that passes through aperture 218 in the sourcearm 210, the measurement spot size on the surface of the sample isincreased. As discussed above, with a large measurement spot size, beamwalking will have less affect. It should be noted that in the presentimplementation, the film may be referred to as thick when the lateralshift from each internal reflection in the film is more than 20%, 50%,80% or 90% of the spot size produced by the first aperture configurationof the aperture 218, as opposed to the second aperture configuration,which will produce a larger measurement spot size.

The aperture 218 in the source arm 210 may be adjusted to alternatebetween a standard aperture and an enlarged aperture (or no aperture)based on the thickness of the film on the sample 201. The aperture 218may be adjusted in several different ways to use the first apertureconfiguration on a standard thin film or to use the second apertureconfiguration which allows more light to pass than the first apertureconfiguration on a thick film.

FIGS. 10, 11, 12, and 13, by way of example, illustrate the source arm210 of the optical metrology device 200 and light 213 reflected from thesample 201 with the aperture 218 adjusted in different configurationsbased on the thickness of the film 204 on the sample 201. For example,FIG. 10 illustrates the film 204 as being relatively thin, e.g., thelateral shift from each internal reflection in the film 204 is less than80% of the spot size, or the film is less than 10μm thick. The aperture218, as shown in FIG. 10, is adjusted to have a first apertureconfiguration, which may be matched to the size of the aperture 228 inthe receiver arm 220, shown in FIG. 2. As discussed in reference to FIG.3, with the aperture 218 in the source arm 210 matching the aperture 228in the receiver arm 220, the light received by the detector 226 is froman area of the sample 210 that is approximately the same as (andcoincident with) the measurement spot.

FIGS. 11, 12, and 13, on the other hand, illustrates the sample 201 witha film 204 that is considered to be thick, e.g., the lateral shift fromeach internal reflection in the film 204 is at least 80% of the spotsize produced by the first aperture configuration of aperture 218, orthe film is 10 μm thick or more. When the film 204 is thick, theaperture 218 in the source arm 210 may be adjusted to a second apertureconfiguration that allows more light to pass in the beam path than thefirst aperture configuration. The aperture 218 may be adjusted inseveral different ways. For example, as illustrated in FIG. 11, the sizeof the opening 218 o in the aperture 218 may be increased in size. Byincreasing the size of the opening 218 o of the aperture 218, more lightpasses through the aperture, as illustrated by the dotted ray lines213″, and the measurement spot size is increased, which reduces theeffect of beam walking. The aperture 228 in the receiver arm 220 may notbe adjusted, so that aperture 228 does not match aperture 218 and thelight received by the detector 226 is from an area of the sample 210that is smaller than the measurement spot, but has little or no effectsfrom beam walking.

In another implementation, to adjust the aperture 218 to the secondaperture configuration, the aperture 218 may be moved. For example, asillustrated in FIG. 12, the aperture 218, which has an opening 218 owith a first size, may be moved and physically replaced with a secondaperture 218′, which has an opening 218 o′ with a second size that islarger than opening 2180. By replacing the aperture 218 with a secondaperture 218′ with a larger opening 218 o′, the measurement spot size isincreased and the effect of beam walking is reduced. Thus, the lightreceived by the detector 226 has little or no effects from beam walking.

FIG. 13 illustrates another example of moving the aperture 218 toproduce a second aperture configuration. As illustrated in FIG. 13, theaperture 218 is moved out of the beam path, but is not replaced with adifferent aperture. By adjusting the aperture 218 in the source arm 210to remove it from the beam path, the measurement spot size is increasedand the effect of beam walking is reduced. Thus, the light received bythe detector 226 has little or no effects from beam walking.

When the film 204 is relatively thin and the aperture 218 has a firstaperture configuration, the area 714 from which light is detected on thesample 201 is approximately the same as and is coincident with themeasurement spot 704, as illustrated in FIG. 7. FIG. 14, on the otherhand, illustrates the film 204 as being relatively thick, similar toFIGS. 8 and 9, but illustrates the effect of adjusting the aperture 218to have the second aperture configuration (as illustrated in FIGS.11-13), in which more light passes than the first apertureconfiguration. The incident light, illustrated with dashed lines andarrow 1402 produces a measurement spot 1410 that is larger, e.g.,increased area, relative to the measurement spot 704 produced whenaperture 218 has the first aperture configuration, as illustrated inFIG. 7. As illustrated in FIG. 14, due to the enlarged size of themeasurement spot 1410, the lateral shift from the internal reflection inthe film 204 will be a smaller percentage of the spot size, and theeffects of beam walking will be reduced, as illustrated by spots 1412,1414, and 1416 significantly overlapping. Accordingly, the area 714 fromwhich light is detected on the sample 201 is smaller than, butcoincident with the measurement spot 1410 and a significant number ofthe laterally shifted spot 1412, 1414, and 1416. Moreover, as thelaterally shifted spots 1412, 1414, and 1416 overlap, there should belittle change in interference between the spots due to beam walking.Accordingly, it is believed that the analysis of the detected lightcollected from area 714 will produce an accurate measurement of thesample 201.

FIGS. 15A-15C and 16A-16C illustrate the effects of lateral beam walkingdue to a thick film on spectroscopic ellipsometer measurements andattempting to counter the effects by modeling the beam walking and byadjusting the aperture in the receive arm to have a second apertureconfiguration that allows more light to pass in the beam path than thefirst aperture configuration, used with thin films. FIGS. 15A-15Cillustrate ellipsometry N, C, and S measurements of a sample with asingle 6 μm film using a spectroscopic ellipsometer having a spot sizeof approximately 20 μm and theoretical data modeled to fit the measureddata, where N, C, and S are related to the familiar ellipsometric valuesof ψ and Δ through the following: N=cos(2ψ), C=sin(2ψ)*cos(Δ), andS=sin(2ψ)*sin(Δ). In FIG. 15A, the data is measured with the aperture inthe receive arm of the spectroscopic ellipsometer having a firstaperture configuration, i.e., matched to the aperture in the source arm.In FIG. 15A, curves 1502 represent measured data and curves 1504represent theoretical data modeled to fit the measured data, wherein themodel does not account for beam walking. FIG. 15B illustrates the samemeasured data as FIG. 15A, represented with curves 1502, and illustratestheoretical data, represented by curves 1514, that is modeled to fit themeasured data using a model that approximates the effect of beamwalking. In FIG. 15C curves 1522 represent data measured with theaperture in the receive arm of the spectroscopic ellipsometer adjustedto have the second aperture configuration, specifically, the aperture isremoved from the beam path (as illustrated in FIG. 6), and curves 1524represent theoretical data that is modeled to fit the measured data,wherein the model does not account for beam walking.

FIGS. 16A-16C, similar to FIGS. 15A-15C, illustrate N, C, and Smeasurements of a sample with a single using a spectroscopicellipsometer having a spot size of approximately 20 μm and theoreticaldata modeled to fit the measured data. In FIGS. 16A-16C, however, thesample has a significantly thicker film of 10 m, as opposed to 6 μmrepresented in FIGS. 15A-15C. In FIG. 16A, similar to FIG. 15A, the datais measured with the aperture in the receive arm of the spectroscopicellipsometer having a first aperture configuration, i.e., matched to theaperture in the source arm, where curves 1602 represent the measureddata and curves 1604 represent theoretical data modeled to fit themeasured data, wherein the model does not account for beam walking. Ascan be seen by comparing FIGS. 16A and 15A, while the effects of beamwalking are present in FIG. 15A, the effects are significantly morepronounced with a film that is 10 μm thick, as opposed to 6 μm.

FIG. 16B illustrates the same measured data as FIG. 16A, representedwith curves 1602, and illustrates theoretical data, represented bycurves 1614, that is modeled to fit the measured data using a model thatapproximates the effect of beam walking. In FIG. 16C, curves 1522represent data measured with the aperture in the receive arm of thespectroscopic ellipsometer adjusted to have the second apertureconfiguration, specifically, the aperture is removed from the beam path(as illustrated in FIG. 6), and curves 1624 represent theoretical datathat is modeled to fit the measured data, wherein the model does notaccount for beam walking.

As can be seen in FIG. 16B, using a model that accounts for the effectsof beam walking improves the fit to conventionally acquired data of asample having a thick film. The fit shown in FIG. 16C, however, byadjusting the aperture, results in a superior fit of the theoreticaldata using conventional modeling. Thus, the fit produced throughmodeling the beam walking (as illustrated in FIG. 16B) produces aninferior fit to the data and requires an extremely heavy calculationload, thereby increasing power requirements, resource requirements, suchas memory and processing units, and calculation time (i.e., reducingthroughput), relative to the use of conventional modeling, as used inFIG. 16C.

FIG. 17 is a flow chart illustrating a method of determining acharacteristic of a film on a sample with an optical metrology device,which may be, e.g., a reflectometer, ellipsometer, scatterometer, etc.As illustrated at block 1702 in FIG. 17, light is produced with a lightsource. At block 1704, the light is focused to be obliquely incident ina measurement spot on a sample, the measurement spot having a spot size,wherein at least a portion of the light is reflected off the sample. Atblock 1706, the light reflected from the sample is received with adetector. At block 1708, a configuration of an aperture in a beam pathof the light is adjusted to use a first aperture configuration or asecond aperture configuration based on a thickness of the film on thesample, wherein the second aperture configuration allows more light topass in the beam path than the first aperture configuration. It shouldbe understood that the adjustment of the aperture in the beam path atblock 1706 may be performed prior to blocks 1702-1706. At block 1710, acharacteristic of the film on the sample is determined with outputsignals from the detector in response to the light reflected from thesample.

In one implementation, the aperture is adjusted to the first apertureconfiguration if the thickness of the film is small enough that alateral shift from each internal reflection in the film is less than 80%of the spot size, and adjusted to the aperture to the second apertureconfiguration if the thickness of the film is large enough that thelateral shift from each internal reflection in the film is at least 80%of the spot size.

In one implementation, the aperture is adjusted to the first apertureconfiguration if the thickness of the film is less than a predefinedthickness, and the aperture is adjusted to the second apertureconfiguration if the thickness of the film is at least the predefinedthickness.

In one implementation, the aperture is adjusted to the first apertureconfiguration if the thickness of the film is not large enough toproduce inaccuracies in the characteristic of the film greater than apredefined tolerance due to lateral beam shift of the light, and theaperture is adjusted to the second aperture configuration if thethickness of the film is large enough to produce inaccuracies in thecharacteristic of the film greater than the predefined tolerance due tothe lateral beam shift of the light.

In one implementation, the method may further include receiving a firstreflected light from the sample or another sample, such as a referencesample, with the detector using the first aperture configuration,receiving a second reflected light from the sample or the other samplewith the detector using the second aperture configuration, and comparingthe first reflected light and the second reflected light. For example,the difference between the first reflected light and the secondreflected light, e.g., spectral discrepancies, may be determined andcompared to a predetermined threshold. The aperture may be adjusted tothe first aperture configuration if a difference between the firstreflected light and the second reflected light is not greater than apredetermined threshold, and the aperture is adjusted to the secondaperture configuration if the difference between the first reflectedlight and the second reflected light is greater than the predeterminedthreshold.

In some implementations, a signal may be communicated to a process toolthat causes the process tool to adjust a process parameter associatedwith a fabrication process step of the sample fabrication sequence basedon the determined characteristic of the test sample. Thus, thecharacteristic of the sample, such as thickness and optical constants,e.g., refractive index n and extinction coefficient k of various layers,including the film on the sample, and other characteristics, includingthe geometries of a structure, such as various critical dimensions of arepeating set of fins or lines, line shapes, etch undercuts, etc., maybe used to modify, alter, or inform further processing of the testsample or the processing of subsequently processed samples, e.g., in afeed forward or feedback process. In this regard, measurement resultsmay be exported to another system.

In some implementations, the configuration of the aperture may beadjusted by placing a first aperture with the first apertureconfiguration in the beam path or placing a second aperture with thesecond aperture configuration in the beam path, wherein the secondaperture has an opening that is larger than an opening in the firstaperture. In some implementations, the configuration of the aperture maybe adjusted by placing a first aperture with the first apertureconfiguration in the beam path or removing the first aperture from thebeam path and no aperture is placed in the beam path in place of thefirst aperture to produce the second aperture configuration. In someimplementations, the configuration of the aperture is adjusted byadjusting a size of an opening in the aperture in the beam path to havethe first aperture configuration or adjusting the size of the opening inthe aperture in the beam path to have the second aperture configuration.

In some implementations, the aperture in the beam path is a detectorside aperture positioned between the sample and detector. In someimplementations, the aperture in the beam path is a light source sideaperture positioned between the light source and the sample.

Although the present invention is illustrated in connection withspecific embodiments for instructional purposes, the present inventionis not limited thereto. Various adaptations and modifications may bemade without departing from the scope of the invention. Therefore, thespirit and scope of the appended claims should not be limited to theforegoing description.

What is claimed is:
 1. A method of determining a characteristic of a film on a sample with an optical metrology device, the method comprising: producing light with a light source; focusing the light to be obliquely incident in a measurement spot on the sample, wherein at least of portion of the light is reflected off the sample; receiving the light reflected from the sample with a detector; adjusting a configuration of an aperture in a beam path of the light to use a first aperture configuration or a second aperture configuration based on a thickness of the film on the sample, wherein the second aperture configuration allows more light to pass in the beam path than the first aperture configuration; and determining the characteristic of the film on the sample with output signals from the detector in response to the light reflected from the sample.
 2. The method of claim 1, the measurement spot having a spot size, wherein adjusting the configuration of the aperture in the beam path of the light to use the first aperture configuration or the second aperture configuration comprises adjusting the aperture to the first aperture configuration if the thickness of the film causes a lateral shift from each internal reflection in the film that is less than 80% of the spot size, and adjusting the aperture to the second aperture configuration if the thickness of the film causes a lateral shift from each internal reflection in the film that is at least 80% of the spot size.
 3. The method of claim 1, wherein adjusting the configuration of the aperture in the beam path of the light to use the first aperture configuration or the second aperture configuration comprises adjusting the aperture to the first aperture configuration if the thickness of the film is less than a predefined thickness, and adjusting the aperture to the second aperture configuration if the thickness of the film is at least the predefined thickness.
 4. The method of claim 1, wherein adjusting the configuration of the aperture in the beam path of the light to use the first aperture configuration or the second aperture configuration comprises adjusting the aperture to the first aperture configuration if the thickness of the film produces inaccuracies in the characteristic of the film less than a predefined tolerance due to lateral beam shift of the light, and adjusting the aperture to the second aperture configuration if the thickness of the film produces inaccuracies in the characteristic of the film greater than the predefined tolerance due to the lateral beam shift of the light.
 5. The method of claim 1, further comprising: receiving a first reflected light from the sample or another sample with the detector using the first aperture configuration; receiving a second reflected light from the sample or the other sample with the detector using the second aperture configuration; and comparing the first reflected light and the second reflected light; wherein adjusting the configuration of the aperture in the beam path of the light to use the first aperture configuration or the second aperture configuration comprises adjusting the aperture to the first aperture configuration if a difference between the first reflected light and the second reflected light is not greater than a predetermined threshold, and adjusting the aperture to the second aperture configuration if the difference between the first reflected light and the second reflected light is greater than the predetermined threshold.
 6. The method of claim 1, wherein adjusting the configuration of the aperture comprises placing a first aperture with the first aperture configuration in the beam path or placing a second aperture with the second aperture configuration in the beam path, wherein the second aperture has an opening that is larger than an opening in the first aperture.
 7. The method of claim 1, wherein adjusting the configuration of the aperture comprises placing a first aperture with the first aperture configuration in the beam path or removing the first aperture from the beam path and no aperture is placed in the beam path in place of the first aperture to produce the second aperture configuration.
 8. The method of claim 1, wherein adjusting the configuration of the aperture comprises adjusting a size of an opening in the aperture in the beam path to have the first aperture configuration or adjusting the size of the opening in the aperture in the beam path to have the second aperture configuration.
 9. The method of claim 1, wherein the aperture in the beam path is a detector side aperture positioned between the sample and the detector.
 10. The method of claim 1, wherein the aperture in the beam path is a light source side aperture positioned between the light source and the sample.
 11. The method of claim 1, further comprising communicating a signal to a process tool that causes the process tool to adjust a process parameter associated with a fabrication process step of a sample fabrication sequence based on the characteristic of the film.
 12. The method of claim 1, wherein the optical metrology device is an ellipsometer.
 13. An optical metrology device capable of determining a characteristic of a film on a sample, the optical metrology device comprising: a light source that produces light; a first set of focusing optics that obliquely focuses the light into a measurement spot on the sample, wherein at least a portion of the light is reflected by the sample; a detector that receives the light reflected from the sample; an adjustable aperture in a beam path of the light, wherein the adjustable aperture is configured to have a first aperture configuration or a second aperture configuration based on a thickness of the film on the sample, wherein the second aperture configuration allows more light to pass in the beam path than the first aperture configuration; and at least one processor coupled to the detector and configured to determine the characteristic of the sample with output signals from the detector in response to the light reflected from the sample.
 14. The optical metrology device of claim 13, the measurement spot having a spot size, wherein the adjustable aperture is adjusted to the first aperture configuration if the thickness of the film causes a lateral shift from each internal reflection in the film that is less than 80% of the spot size, and the adjustable aperture is adjusted to the second aperture configuration if the thickness of the film causes a lateral shift from each internal reflection in the film that is at least 80% of the spot size.
 15. The optical metrology device of claim 13, wherein the adjustable aperture is adjusted to the first aperture configuration if the thickness of the film is less than a predefined thickness, and the adjustable aperture is adjusted to the second aperture configuration if the thickness of the film is at least the predefined thickness.
 16. The optical metrology device of claim 13, wherein the adjustable aperture is adjusted to the first aperture configuration if the thickness of the film produces inaccuracies in the characteristic of the film less than a predefined tolerance due to lateral beam shift of the light, and the adjustable aperture is adjusted to the second aperture configuration if the thickness of the film produces inaccuracies in the characteristic of the film greater than the predefined tolerance due to the lateral beam shift of the light.
 17. The optical metrology device of claim 13, wherein the at least one processor is further configured to determine a difference between a first reflected light received from the sample by the detector with the adjustable aperture in the first aperture configuration and a second reflected light received from the sample or the other sample by the detector with the adjustable aperture in the second aperture configuration; wherein the adjustable aperture is adjusted to the first aperture configuration if the difference between the first reflected light and the second reflected light is not greater than a predetermined threshold, and the adjustable aperture is adjusted to the second aperture configuration if the difference between the first reflected light and the second reflected light is greater than the predetermined threshold.
 18. The optical metrology device of claim 13, wherein the adjustable aperture comprises a first aperture with the first aperture configuration that is placed in the beam path or a second aperture with the second aperture configuration that is placed in the beam path, wherein the second aperture has an opening that is larger than an opening in the first aperture.
 19. The optical metrology device of claim 13, wherein the adjustable aperture comprises a movable aperture with the first aperture configuration that is placed in the beam path or removed from the beam path and no aperture is placed in the beam path in place of the movable aperture to produce the second aperture configuration.
 20. The optical metrology device of claim 13, wherein the adjustable aperture comprises a variable sized opening in the adjustable aperture that is in the beam path and a size of the variable sized opening is adjusted to have the first aperture configuration or adjusted to have the second aperture configuration.
 21. The optical metrology device of claim 13, wherein the adjustable aperture in the beam path is a detector side aperture positioned between the sample and the detector.
 22. The optical metrology device of claim 13, wherein the adjustable aperture in the beam path is a light source side aperture positioned between the light source and the sample.
 23. The optical metrology device of claim 13, wherein the at least one processor is further configured to communicate a signal to a process tool that causes the process tool to adjust a process parameter associated with a fabrication process step of a sample fabrication sequence based on the characteristic of the film.
 24. The optical metrology device of claim 13, wherein the optical metrology device is an ellipsometer.
 25. An optical metrology device capable of determining a characteristic of a film on a sample, the optical metrology device comprising: a light source that produces light; a first set of focusing optics that obliquely focuses the light into a measurement spot on the sample, wherein at least a portion of the light is reflected by the sample; a detector that receives the light from the sample; a means for adjusting a configuration of an aperture in a beam path of the light to use a first aperture configuration or a second aperture configuration based on a thickness of the film on the sample, wherein the second aperture configuration allows more light to pass in the beam path than the first aperture configuration; and at least one processor coupled to the detector and configured to determine the characteristic of the sample with output signals from the detector in response to the light reflected from the sample.
 26. The optical metrology device of claim 25, the measurement spot having a spot size, wherein the first aperture configuration is selected if the thickness of the film causes a lateral shift from each internal reflection in the film that is less than 80% of the spot size or if the thickness of the film is less than a predefined thickness, and the second aperture configuration is selected if the thickness of the film causes a lateral shift from each internal reflection in the film that is at least 80% of the spot size or if the thickness of the film is at least the predefined thickness.
 27. The optical metrology device of claim 25, wherein the first aperture configuration is selected if the thickness of the film produces inaccuracies in the characteristic of the film less than a predefined tolerance due to lateral beam shift of the light, and wherein the second configuration is selected if the thickness of the film produces inaccuracies in the characteristic of the film greater than the predefined tolerance due to the lateral beam shift of the light.
 28. The optical metrology device of claim 25, wherein the at least one processor is further configured to determine a difference between a first reflected light received from the sample by the detector with the first aperture configuration and a second reflected light received from the sample or the other sample by the detector with the second aperture configuration; wherein the first configuration is selected if the difference between the first reflected light and the second reflected light is not greater than a predetermined threshold, and the second aperture configuration is selected if the difference between the first reflected light and the second reflected light is greater than the predetermined threshold.
 29. The optical metrology device of claim 25, wherein the means for adjusting the configuration of the aperture places different sized openings in the beam path.
 30. The optical metrology device of claim 25, wherein the means for adjusting the configuration of the aperture removes the aperture from the beam path to produce the second configuration.
 31. The optical metrology device of claim 25, wherein the means for adjusting the configuration of the aperture varies an opening in the aperture.
 32. The optical metrology device of claim 25, wherein the at least one processor is further configured to communicate a signal to a process tool that causes the process tool to adjust a process parameter associated with a fabrication process step of a sample fabrication sequence based on the characteristic of the film.
 33. The optical metrology device of claim 25, wherein the optical metrology device is an ellipsometer. 